Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition

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Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition.

The controlled growth of large-area, high-quality, single-crystal graphene is highly desired for applications in electronics and optoelectronics; however, the production of this material remains challenging because the atomistic mechanism that governs graphene growth is not well understood. The edges of graphene, which are the sites at which carbon accumulates in the two-dimensional honeycomb l...

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ژورنال

عنوان ژورنال: Proceedings of the National Academy of Sciences

سال: 2013

ISSN: 0027-8424,1091-6490

DOI: 10.1073/pnas.1312802110